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	Strain-induced anodization of sige/si multiple layers to form high density sige/si heterogeneous nanorods
	Zhou, Bi1,2; Pan, S. W.1,2; Chen, Rui1,2,3; Chen, S. Y.1,2; Li, Cheng1,2; Lai, H. K.1,2; Yu, J. Z.4; Zhu, X. F.5,6
刊名	Solid state communications
	2009-11-01
卷号	149期号:43-44页码:1897-1901
关键词	Strain-induced Electrochemical anodization Silicon germanium Heterogeneous nanostructures
ISSN号	0038-1098
DOI	10.1016/j.ssc.2009.08.001
通讯作者	Chen, s. y.(sychen@xmu.edu.cn)
英文摘要	Sige/si heterogeneous nanostructures are prepared by electrochemical anodization of sige/si multiple layers grown by ultra-high vacuum chemical vapor deposition. nanorods with densities up to similar to 2 x 10(11) cm(-2) have been observed with a relatively uniform distribution confirmed by scanning electron microscope images of both top and cross-sectional views. the samples show visible photoluminescence with multiple peaks and narrow widths which is related to the interference effect. finally, a model is proposed to explain the role of strain during the anodization of sige/si multiple layers. (c) 2009 elsevier ltd. all rights reserved.
WOS关键词	POROUS SILICON LAYER ; VISIBLE PHOTOLUMINESCENCE ; SURFACE-MORPHOLOGY ; THIN-FILMS ; SI ; GERMANIUM ; SUPERLATTICES ; NANOCRYSTALS ; RELAXATION ; GROWTH
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000271332400008
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427577
专题	半导体研究所
通讯作者	Chen, S. Y.
作者单位	1.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 2.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 3.Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore 4.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 5.Xiamen Univ, Dept Phys, China Australia Joint Lab Funct Nanomat, Xiamen 361005, Peoples R China 6.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Bi,Pan, S. W.,Chen, Rui,et al. Strain-induced anodization of sige/si multiple layers to form high density sige/si heterogeneous nanorods[J]. Solid state communications,2009,149(43-44):1897-1901.
APA	Zhou, Bi.,Pan, S. W..,Chen, Rui.,Chen, S. Y..,Li, Cheng.,...&Zhu, X. F..(2009).Strain-induced anodization of sige/si multiple layers to form high density sige/si heterogeneous nanorods.Solid state communications,149(43-44),1897-1901.
MLA	Zhou, Bi,et al."Strain-induced anodization of sige/si multiple layers to form high density sige/si heterogeneous nanorods".Solid state communications 149.43-44(2009):1897-1901.

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