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	Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods
	Yang, Zhaozhu; Xue, Chengshan; Zhuang, Huizhao; Wang, Gongtang; Chen, Jinhua; Li, Hong; Qin, Lixia; Zhang, Dongdong; Huang, Yinglong
刊名	Solid state communications
	2008-12-01
卷号	148期号:9-10页码:480-483
关键词	Gallium Nanorods Crystal growth Optical properties
ISSN号	0038-1098
DOI	10.1016/j.ssc.2008.04.017
通讯作者	Xue, chengshan(xuechengshan@sdnu.edu.cn)
英文摘要	Beta-ga2o3 nanostructured materials have been obtained on si(111) substrates by annealing the ga2o3/v films at different temperatures. x-ray diffraction (xrd), scanning electron microscope (sem), high-resolution transmission electron microscope (hrtem) and photoluminescence (pl) spectrum were used to analyze the structure, morphology and optical properties of beta-ga2o3 nanostructured films. these properties were investigated particularly as a function of annealing temperature. our results indicate that the beta-ga2o3 nanorods annealed at 950 degrees c have the best morphology and crystallinity. these nanorods are pure monoclinic ga2o3 structures with lengths of about 5 mu m and diameters of about 180 rim, which is conducive to the application of nanodevices. finally, the growth mechanism is also discussed briefly. (c) 2008 elsevier ltd. all rights reserved.
WOS关键词	GALLIUM OXIDE ; GAS SENSORS ; NANOWIRES ; PHOTOLUMINESCENCE ; LUMINESCENCE ; GROWTH ; CARBON
WOS研究方向	Physics
WOS类目	Physics, Condensed Matter
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000261406000031
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427455
专题	半导体研究所
通讯作者	Xue, Chengshan
作者单位	Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
推荐引用方式 GB/T 7714	Yang, Zhaozhu,Xue, Chengshan,Zhuang, Huizhao,et al. Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods[J]. Solid state communications,2008,148(9-10):480-483.
APA	Yang, Zhaozhu.,Xue, Chengshan.,Zhuang, Huizhao.,Wang, Gongtang.,Chen, Jinhua.,...&Huang, Yinglong.(2008).Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods.Solid state communications,148(9-10),480-483.
MLA	Yang, Zhaozhu,et al."Effect of annealing temperature of ga2o3/v films on synthesizing beta-ga2o3 nanorods".Solid state communications 148.9-10(2008):480-483.

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