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	Small sige quantum dots obtained by excimer laser annealing
	Han, Genquan1; Zeng, Yugang1; Liu, Yan1; Yu, Jinzhong1; Cheng, Buwen1; Yang, Haitao2
刊名	Journal of crystal growth
	2008-08-01
卷号	310期号:16页码:3746-3751
关键词	Diffusion Atomic force microscopy Germanium silicon alloys
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2008.05.052
通讯作者	Han, genquan(hgquan@red.semi.ac.cn)
英文摘要	In this paper, we obtain sige quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of si0.77ge0.23 strained films. under the excimer laser annealing, only surface atoms diffusion happens. from the detailed statistical information about the size and shape of the quantum dots with different annealing time, it is shown that the as-grown self-assembled quantum dots, especially the {105}-faceted dots, are not stable and disappear before the appearance of the laser-induced quantum dots. based on the calculation of surface energy and surface chemical potential, we show that the {103}-faceted as-grown self-assembled quantum dots are more heavily strained than the {105}-faceted ones, and the heavy strain in the dot can decrease the surface energy of the dot facets. the formation of the laser-induced quantum dots, which is also with heavy strain, is attributed to kinetic constraint. (c) 2008 elsevier b.v. all rights reserved.
WOS关键词	GE ISLANDS ; STRAIN RELAXATION ; SUPERLATTICES ; EVOLUTION ; SILICON ; SI(100) ; SI(001) ; GROWTH
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000258801200011
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427427
专题	半导体研究所
通讯作者	Han, Genquan
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Tsinghua Univ, Dept Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Beijing, Peoples R China
推荐引用方式 GB/T 7714	Han, Genquan,Zeng, Yugang,Liu, Yan,et al. Small sige quantum dots obtained by excimer laser annealing[J]. Journal of crystal growth,2008,310(16):3746-3751.
APA	Han, Genquan,Zeng, Yugang,Liu, Yan,Yu, Jinzhong,Cheng, Buwen,&Yang, Haitao.(2008).Small sige quantum dots obtained by excimer laser annealing.Journal of crystal growth,310(16),3746-3751.
MLA	Han, Genquan,et al."Small sige quantum dots obtained by excimer laser annealing".Journal of crystal growth 310.16(2008):3746-3751.

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