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	Hydrogen sensors based on algan/ain/gan hemt
	Wang, X. H.; Wang, X. L.; Feng, C.; Yang, C. B.; Wang, B. Z.; Ran, J. X.; Xiao, H. L.; Wang, C. M.; Wang, J. X.
刊名	Microelectronics journal
	2008
卷号	39期号:1页码:20-23
关键词	Algan/ain/gan hemt Hydrogen sensor
ISSN号	0026-2692
DOI	10.1016/j.mejo.2007.10.022
通讯作者	Wang, x. h.(wxh@mail.semi.ac.cn)
英文摘要	Pt/algan/ain/gan high electron mobility transistors (hemt) were fabricated and characterized for hydrogen sensing. pt and ti/al/ni/au metals were evaporated to form the schottky contact and the ohmic contact, respectively. the sensors can be operated in either the field effect transistor (fet) mode or the schottky diode mode. current changes and time dependence of the sensors under the fet and diode modes were compared. when the sensor was operated in the fet mode, the sensor can have larger current change of 8 ma, but its sensitivity is only about 0.2. in the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 ma under the forward bias. the sensor had much higher sensitivity when operated in the diode mode than in the fet mode. the oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor. (c) 2007 elsevier ltd. all rights reserved.
WOS关键词	DIODE GAS SENSORS ; SCHOTTKY DIODES ; MOBILITY ; TEMPERATURE ; TRANSISTORS ; GROWTH ; MOCVD ; LAYER
WOS研究方向	Engineering ; Science & Technology - Other Topics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000253225800004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427334
专题	半导体研究所
通讯作者	Wang, X. H.
作者单位	Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Wang, X. H.,Wang, X. L.,Feng, C.,et al. Hydrogen sensors based on algan/ain/gan hemt[J]. Microelectronics journal,2008,39(1):20-23.
APA	Wang, X. H..,Wang, X. L..,Feng, C..,Yang, C. B..,Wang, B. Z..,...&Wang, J. X..(2008).Hydrogen sensors based on algan/ain/gan hemt.Microelectronics journal,39(1),20-23.
MLA	Wang, X. H.,et al."Hydrogen sensors based on algan/ain/gan hemt".Microelectronics journal 39.1(2008):20-23.

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