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A novel butt-joint scheme for the preparation of electro-absorptive lasers
Cheng, Yuanbing1; Pan, Jiaoqing2; Zhou, Fan1; Feng, Wen2; Wang, Baojun1; Zhu, Hongliang2; Zhao, Lingjuan2; Wang, Wei1,2
刊名Journal of physics d-applied physics
2008-02-07
卷号41期号:3页码:4
ISSN号0022-3727
DOI10.1088/0022-3727/41/3/035108
通讯作者Cheng, yuanbing(ybcheng@semi.ac.cn)
英文摘要A 1.55 mu m ingaasp/ingaasp multiple-quantum-well electro-absorption modulator (eam) monolithically integrated with a distributed feedback laser (dfb) diode has been realized based on a novel butt-joint scheme by ultra-low metal-organic vapour phase epitaxy for the first time. the threshold current of 25 ma and an extinction ratio of more than 30 db are obtained by using the novel structure. the beam divergence angles at the horizontal and vertical directions are as small as 19.3 degrees x 13 degrees, respectively, without a spot-size converter by undercutting the ingaasp active region. the capacitance of the ridge waveguide device with a deep mesa buried by polyimide was reduced down to 0.30 pf.
WOS关键词INTEGRATED DFB LASER ; ELECTROABSORPTION MODULATOR ; ACTIVE LAYER ; LOW-CHIRP ; PERFORMANCE ; EPITAXY
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000253177800022
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427221
专题半导体研究所
通讯作者Cheng, Yuanbing
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Key Lab Semicond Mat, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cheng, Yuanbing,Pan, Jiaoqing,Zhou, Fan,et al. A novel butt-joint scheme for the preparation of electro-absorptive lasers[J]. Journal of physics d-applied physics,2008,41(3):4.
APA Cheng, Yuanbing.,Pan, Jiaoqing.,Zhou, Fan.,Feng, Wen.,Wang, Baojun.,...&Wang, Wei.(2008).A novel butt-joint scheme for the preparation of electro-absorptive lasers.Journal of physics d-applied physics,41(3),4.
MLA Cheng, Yuanbing,et al."A novel butt-joint scheme for the preparation of electro-absorptive lasers".Journal of physics d-applied physics 41.3(2008):4.
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