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	Cathodoluminescence study of gan-based film structures
	Jiang, D. S.1; Jahn, U.2; Chen, J.1; Li, D. Y.1; Zhang, S. M.1; Zhu, J. J.1; Zhao, D. G.1; Liu, Z. S.1; Yang, H.1; Ploog, K.2
刊名	Journal of materials science-materials in electronics
	2008-12-01
卷号	19页码:S58-s63
ISSN号	0957-4522
DOI	10.1007/s10854-007-9559-z
通讯作者	Jiang, d. s.(dsjiang@red.semi.ac.cn)
英文摘要	Gan films grown on sapphire substrate with an emphasis on epitaxial lateral overgrown (elog) layers with an array of rhombic shaped mask area as well as ingan/gan mqw laser diode layer structures were investigated by cathodoluminescence (cl) spectroscopy and cl imaging at room and low temperatures. the microscopic imaging with a high-spatial resolution clearly reveals the distribution of threading dislocations and point defects in elog gan films. the secondary electron and cl data measured on cleaved faces of laser diodes are analyzed in consideration with luminescence mechanisms in semiconductor heterostructures and around the p - n junction, providing important information on the defects and carrier dynamics in laser diode devices.
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000260288100012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427190
专题	半导体研究所
通讯作者	Jiang, D. S.
作者单位	1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
推荐引用方式 GB/T 7714	Jiang, D. S.,Jahn, U.,Chen, J.,et al. Cathodoluminescence study of gan-based film structures[J]. Journal of materials science-materials in electronics,2008,19:S58-s63.
APA	Jiang, D. S..,Jahn, U..,Chen, J..,Li, D. Y..,Zhang, S. M..,...&Ploog, K..(2008).Cathodoluminescence study of gan-based film structures.Journal of materials science-materials in electronics,19,S58-s63.
MLA	Jiang, D. S.,et al."Cathodoluminescence study of gan-based film structures".Journal of materials science-materials in electronics 19(2008):S58-s63.

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