CORC  > 半导体研究所
Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy
Wu Bing-Peng; Wu Dong-Hai; Ni Hai-Qiao; Huang She-Song; Zhan Feng; Xiong Yong-Hua; Xu Ying-Qiang; Niu Zhi-Chuan
刊名Chinese physics letters
2007-12-01
卷号24期号:12页码:3543-3546
ISSN号0256-307X
通讯作者Wu dong-hai(wudonghai@red.semi.ac.cn)
英文摘要We investigate the molecular beam epitaxy growth of metamorphic inxga(1-x)as materials (x up to 0.5) on gaas substrates systematically. optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. the optimized structures have an average surface roughness of 0.9-1.8 nm. it is also proven by pl measurements that the optical properties of high indium content (55%) ingaas quantum wells are improved apparently by defect reduction technique and by introducing sb as a surfactant. these provide us new ways for growing device quality metamorphic structures on gaas substrates with long-wavelength emissions.
WOS关键词LAYERS ; SURFACTANT ; SUBSTRATE ; HEMT ; SB
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000251774200069
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2427156
专题半导体研究所
通讯作者Wu Dong-Hai
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wu Bing-Peng,Wu Dong-Hai,Ni Hai-Qiao,et al. Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy[J]. Chinese physics letters,2007,24(12):3543-3546.
APA Wu Bing-Peng.,Wu Dong-Hai.,Ni Hai-Qiao.,Huang She-Song.,Zhan Feng.,...&Niu Zhi-Chuan.(2007).Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy.Chinese physics letters,24(12),3543-3546.
MLA Wu Bing-Peng,et al."Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy".Chinese physics letters 24.12(2007):3543-3546.
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