Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy | |
Wu Bing-Peng; Wu Dong-Hai; Ni Hai-Qiao; Huang She-Song; Zhan Feng; Xiong Yong-Hua; Xu Ying-Qiang; Niu Zhi-Chuan | |
刊名 | Chinese physics letters |
2007-12-01 | |
卷号 | 24期号:12页码:3543-3546 |
ISSN号 | 0256-307X |
通讯作者 | Wu dong-hai(wudonghai@red.semi.ac.cn) |
英文摘要 | We investigate the molecular beam epitaxy growth of metamorphic inxga(1-x)as materials (x up to 0.5) on gaas substrates systematically. optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. the optimized structures have an average surface roughness of 0.9-1.8 nm. it is also proven by pl measurements that the optical properties of high indium content (55%) ingaas quantum wells are improved apparently by defect reduction technique and by introducing sb as a surfactant. these provide us new ways for growing device quality metamorphic structures on gaas substrates with long-wavelength emissions. |
WOS关键词 | LAYERS ; SURFACTANT ; SUBSTRATE ; HEMT ; SB |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
出版者 | IOP PUBLISHING LTD |
WOS记录号 | WOS:000251774200069 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2427156 |
专题 | 半导体研究所 |
通讯作者 | Wu Dong-Hai |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wu Bing-Peng,Wu Dong-Hai,Ni Hai-Qiao,et al. Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy[J]. Chinese physics letters,2007,24(12):3543-3546. |
APA | Wu Bing-Peng.,Wu Dong-Hai.,Ni Hai-Qiao.,Huang She-Song.,Zhan Feng.,...&Niu Zhi-Chuan.(2007).Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy.Chinese physics letters,24(12),3543-3546. |
MLA | Wu Bing-Peng,et al."Optimization of metamorphic ingaas quantum wells on gaas grown by molecular beam epitaxy".Chinese physics letters 24.12(2007):3543-3546. |
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