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	Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy
	Zhao, H.; Xu, Y. Q.; Ni, H. Q.; Zhang, S. Y.; Han, Q.; Du, Y.; Yang, X. H.; Wu, R. H.; Niu, Z. C.
刊名	Journal of crystal growth
	2007-04-01
卷号	301页码:979-983
关键词	Photoluminescence Quantum well Rapid thermal annealing
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2006.11.307
通讯作者	Zhao, h.(zhaohuan@red.semi.ac.cn)
英文摘要	Rapid thermal annealing (rta) has been demonstrated as an effective way to improve the crystal quality of gainnas(sb) quantum wells (qws). however, few investigations have been made into its application in laser growth and fabrication. we have fabricated 1.3 mu m gainnas lasers, both as -grown and with post-growth rta. enhanced photoluminescence (pl) intensity and decreased threshold current are obtained with rta, but the characteristic temperature t-o and slope efficiency deteriorate. furthermore, t-o has an abnormal dependence on the cavity length. we attribute these problems to the deterioration of the wafer's surface. rta with deposition of sio2 was performed to avoid this deterioration, t-o was improved over the samples that underwent rta without sio2. post-growth and in situ annealing were also investigated in a 1.55 mu m gainnassb system. finally, continuous operation at room temperature of a gaas-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 elsevier b.v. all rights reserved.
WOS关键词	IMPROVED LUMINESCENCE EFFICIENCY ; QUANTUM-WELLS ; ORIGIN
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000246015800226
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2427129
专题	半导体研究所
通讯作者	Zhao, H.
作者单位	Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhao, H.,Xu, Y. Q.,Ni, H. Q.,et al. Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy[J]. Journal of crystal growth,2007,301:979-983.
APA	Zhao, H..,Xu, Y. Q..,Ni, H. Q..,Zhang, S. Y..,Han, Q..,...&Niu, Z. C..(2007).Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy.Journal of crystal growth,301,979-983.
MLA	Zhao, H.,et al."Application of rapid thermal annealing on 1.3-1.55 mu m gainnas(sb) lasers grown by molecular beam epitaxy".Journal of crystal growth 301(2007):979-983.

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