Role of edge dislocations in enhancing the yellow luminescence of n-type gan | |
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Li, X; Li, XY; Gong, HM | |
刊名 | Applied physics letters
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2006-06-12 | |
卷号 | 88期号:24页码:3 |
ISSN号 | 0003-6951 |
DOI | 10.1063/1.2213509 |
通讯作者 | Zhao, dg(dgzhao@red.semi.ac.cn) |
英文摘要 | We investigate the origin of yellow luminescence in n-type gan. it is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. this indicates that the yellow luminescence is related to the edge dislocation density. in addition, the relative intensity of yellow luminescence is confirmed to increase with increasing si doping for the high quality gan we have obtained. we propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as si to acceptors around the edge dislocations in n-type gan. (c) 2006 american institute of physics. |
WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; X-RAY-DIFFRACTION ; MG-DOPED GAN ; UNDOPED GAN ; PHOTOLUMINESCENCE BANDS ; THREADING DISLOCATIONS ; POSITRON-ANNIHILATION ; GROWTH STOICHIOMETRY ; GALLIUM NITRIDE |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000238314800035 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2426783 |
专题 | 半导体研究所 |
通讯作者 | Zhao, DG |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao, DG,Jiang, DS,Zhu, JJ,et al. Role of edge dislocations in enhancing the yellow luminescence of n-type gan[J]. Applied physics letters,2006,88(24):3. |
APA | Zhao, DG.,Jiang, DS.,Zhu, JJ.,Liu, ZS.,Zhang, SM.,...&Gong, HM.(2006).Role of edge dislocations in enhancing the yellow luminescence of n-type gan.Applied physics letters,88(24),3. |
MLA | Zhao, DG,et al."Role of edge dislocations in enhancing the yellow luminescence of n-type gan".Applied physics letters 88.24(2006):3. |
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