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Role of edge dislocations in enhancing the yellow luminescence of n-type gan
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Li, X; Li, XY; Gong, HM
刊名Applied physics letters
2006-06-12
卷号88期号:24页码:3
ISSN号0003-6951
DOI10.1063/1.2213509
通讯作者Zhao, dg(dgzhao@red.semi.ac.cn)
英文摘要We investigate the origin of yellow luminescence in n-type gan. it is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. this indicates that the yellow luminescence is related to the edge dislocation density. in addition, the relative intensity of yellow luminescence is confirmed to increase with increasing si doping for the high quality gan we have obtained. we propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as si to acceptors around the edge dislocations in n-type gan. (c) 2006 american institute of physics.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; MOLECULAR-BEAM EPITAXY ; X-RAY-DIFFRACTION ; MG-DOPED GAN ; UNDOPED GAN ; PHOTOLUMINESCENCE BANDS ; THREADING DISLOCATIONS ; POSITRON-ANNIHILATION ; GROWTH STOICHIOMETRY ; GALLIUM NITRIDE
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000238314800035
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2426783
专题半导体研究所
通讯作者Zhao, DG
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
推荐引用方式
GB/T 7714
Zhao, DG,Jiang, DS,Zhu, JJ,et al. Role of edge dislocations in enhancing the yellow luminescence of n-type gan[J]. Applied physics letters,2006,88(24):3.
APA Zhao, DG.,Jiang, DS.,Zhu, JJ.,Liu, ZS.,Zhang, SM.,...&Gong, HM.(2006).Role of edge dislocations in enhancing the yellow luminescence of n-type gan.Applied physics letters,88(24),3.
MLA Zhao, DG,et al."Role of edge dislocations in enhancing the yellow luminescence of n-type gan".Applied physics letters 88.24(2006):3.
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