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	Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy
	Cui, L. J.; Zeng, Y. P.; Wang, B. Q.; Zhu, Z. P.
刊名	Journal of crystal growth
	2006-08-01
卷号	293期号:2页码:291-293
关键词	Characterization Point defects Molecular beam epitaxy Semiconducting gallium compounds Semiconducting indium compounds Semiconducting ternary compounds
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2006.05.071
通讯作者	Cui, l. j.(ljcui@red.semi.ac.cn)
英文摘要	A series of 1-mu m-thick undoped in0.53ga0.47as with different substrate growth temperature (t-g) or different beam flux pressure (bfp) of as were grown on lattice-matched semi-insulating inp (001) substrates by molecular beam epitaxy (mbe). van der pauw hall measurements were carried out for these in0.53ga0.47as samples. the residual electron concentration decreased with increasing temperature from 77 to 140 k, but increased with increasing temperature from 140 to 300 k. rapid thermal annealing (rta) can reduce the residual electron concentration. the residual electron mobility increased with increasing temperature from 77 to 300 k. all these electrical properties are associated with as antisite defects. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词	1.55 MU-M ; QUANTUM-WELLS ; TEMPERATURE ; GAAS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000239882600012
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426748
专题	半导体研究所
通讯作者	Cui, L. J.
作者单位	Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Cui, L. J.,Zeng, Y. P.,Wang, B. Q.,et al. Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy[J]. Journal of crystal growth,2006,293(2):291-293.
APA	Cui, L. J.,Zeng, Y. P.,Wang, B. Q.,&Zhu, Z. P..(2006).Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy.Journal of crystal growth,293(2),291-293.
MLA	Cui, L. J.,et al."Electrical properties of undoped in0.53ga0.47as grown on inp substrates by molecular beam epitaxy".Journal of crystal growth 293.2(2006):291-293.

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