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	High-performance 1.55 mu m low-temperature-grown gaas resonant-cavity-enhanced photodetector
	Han, Q.; Niu, Z. C.; Peng, L. H.; Ni, H. Q.; Yang, X. H.; Du, Y.; Zhao, H.; Wu, R. H.; Wang, Q. M.
刊名	Applied physics letters
	2006-09-25
卷号	89期号:13页码:3
ISSN号	0003-6951
DOI	10.1063/1.2357916
通讯作者	Han, q.(hanqin@red.semi.ac.cn)
英文摘要	A 1.55 mu m low-temperature-grown gaas (lt-gaas) photodetector with a resonant-cavityenhanced structure was designed and fabricated. a lt-gaas layer grown at 200 degrees c was used as the absorption layer. twenty- and fifteen-pair gaas/alas-distributed bragg reflectors were grown as the bottom and top mirrors. a responsivity of 7.1 ma/w with a full width at half maximum of 4 nm was obtained at 1.61 mu m. the dark current densities are 1.28x10(-7) a/cm(2) at the bias of 0 v and 3.5x10(-5) a/cm(2) at the reverse bias of 4.0 v. the transient response measurement showed that the photocarrier lifetime in lt-gaas is 220 fs. (c) 2006 american institute of physics.
WOS关键词	HIGH-SPEED ; CARRIER DYNAMICS ; M OPERATION ; 1.55-MU-M ; POWER
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000240875800004
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426732
专题	半导体研究所
通讯作者	Han, Q.
作者单位	Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Han, Q.,Niu, Z. C.,Peng, L. H.,et al. High-performance 1.55 mu m low-temperature-grown gaas resonant-cavity-enhanced photodetector[J]. Applied physics letters,2006,89(13):3.
APA	Han, Q..,Niu, Z. C..,Peng, L. H..,Ni, H. Q..,Yang, X. H..,...&Wang, Q. M..(2006).High-performance 1.55 mu m low-temperature-grown gaas resonant-cavity-enhanced photodetector.Applied physics letters,89(13),3.
MLA	Han, Q.,et al."High-performance 1.55 mu m low-temperature-grown gaas resonant-cavity-enhanced photodetector".Applied physics letters 89.13(2006):3.

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