Passively mode-locking nd : gd0.5y0.5vo4 laser with an in(0.25)ga(0.75)aa absorber grown at low temperature | |
Wang, YG; Ma, XY; Fan, YX; Wang, HT | |
刊名 | Applied optics |
2005-07-10 | |
卷号 | 44期号:20页码:4384-4387 |
ISSN号 | 1559-128X |
通讯作者 | Wang, yg(chinawygxjw@163.com) |
英文摘要 | We have demonstrated stable self-starting passive mode locking in a diode-end-pumped nd:gd-0.8-y0.5vo4 laser by using an in0.25ga0.75as absorber grown at low temperature (lt in0.25ga0.75as absorber). an in0.25ga0.75as single-quantum-well absorber, which was grown directly on the gaas buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. continuous-wave mode-locked pulses were obtained at 1063.5 nm. we achieved a pulse duration of 2.6 ps and an average output power of 2.15 w at a repetition rate of 96.4 mhz. (c) 2005 optical society of america. |
WOS关键词 | PUMPED ND-GDVO4 LASER ; SATURABLE-ABSORBER ; MIRROR ; GAAS |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
出版者 | OPTICAL SOC AMER |
WOS记录号 | WOS:000230366700024 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2426519 |
专题 | 半导体研究所 |
通讯作者 | Wang, YG |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 2100933, Peoples R China 3.Nanjing Univ, Dept Phys, Nanjing 2100933, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, YG,Ma, XY,Fan, YX,et al. Passively mode-locking nd : gd0.5y0.5vo4 laser with an in(0.25)ga(0.75)aa absorber grown at low temperature[J]. Applied optics,2005,44(20):4384-4387. |
APA | Wang, YG,Ma, XY,Fan, YX,&Wang, HT.(2005).Passively mode-locking nd : gd0.5y0.5vo4 laser with an in(0.25)ga(0.75)aa absorber grown at low temperature.Applied optics,44(20),4384-4387. |
MLA | Wang, YG,et al."Passively mode-locking nd : gd0.5y0.5vo4 laser with an in(0.25)ga(0.75)aa absorber grown at low temperature".Applied optics 44.20(2005):4384-4387. |
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