Thermal quenching of luminescence from buried and surface ingaas self-assembled quantum dots with high sheet density | |
Wei, ZF; Xu, SJ; Duan, RF; Li, Q; Wang, J; Zeng, YP; Liu, HC | |
刊名 | Journal of applied physics
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2005-10-15 | |
卷号 | 98期号:8页码:4 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.2112176 |
通讯作者 | Xu, sj() |
英文摘要 | Variable-temperature photoluminescence (pl) spectra of si-doped self-assembled ingaas quantum dots (qds) with and without gaas cap layers were measured. narrow and strong emission peak at 1075 nm and broad and weak peak at 1310 nm were observed for the buried and surface qds at low temperature, respectively. as large as 210 mev redshift of the pl peak of the surface qds with respect to that of the buried qds is mainly due to the change of the strain around qds before and after growth of the gaas cap layer. using the developed localized-state luminescence model, we quantitatively calculate the temperature dependence of pl peaks and integrated intensities of the two samples. the results reveal that there exists a large difference in microscopic mechanisms of pl thermal quenching between two samples. (c) 2005 american institute of physics. |
WOS关键词 | LOCALIZED EXCITONS ; OPTICAL-PROPERTIES ; TEMPERATURE-DEPENDENCE ; PHOTOLUMINESCENCE ; ACTIVATION |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000232937500065 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2426495 |
专题 | 半导体研究所 |
通讯作者 | Xu, SJ |
作者单位 | 1.Univ Hong Kong, Dept Phys, CAS, Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada |
推荐引用方式 GB/T 7714 | Wei, ZF,Xu, SJ,Duan, RF,et al. Thermal quenching of luminescence from buried and surface ingaas self-assembled quantum dots with high sheet density[J]. Journal of applied physics,2005,98(8):4. |
APA | Wei, ZF.,Xu, SJ.,Duan, RF.,Li, Q.,Wang, J.,...&Liu, HC.(2005).Thermal quenching of luminescence from buried and surface ingaas self-assembled quantum dots with high sheet density.Journal of applied physics,98(8),4. |
MLA | Wei, ZF,et al."Thermal quenching of luminescence from buried and surface ingaas self-assembled quantum dots with high sheet density".Journal of applied physics 98.8(2005):4. |
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