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	Growth of crack-free gan films on si(111) substrate by using al-rich aln buffer layer
	Lu, Y; Cong, GW; Liu, XL; Lu, DC; Zhu, QS; Wang, XH; Wu, JJ; Wang, ZG
刊名	Journal of applied physics
	2004-11-01
卷号	96期号:9页码:4982-4988
ISSN号	0021-8979
DOI	10.1063/1.1787588
通讯作者	Lu, y(yuanlu@semi.ac.cn)
英文摘要	Gan epilayers were grown on si(111) substrate by metalorganic chemical vapor deposition. by using the al-rich aln buffer which contains al beyond stoichiometry, crack-free gan epilayers with 1 mum thickness were obtained. through x-ray diffraction (xrd) and secondary ion mass spectroscopy analyses, it was found that a lot of al atoms have diffused into the under part of the gan epilayer from the al-rich aln buffer, which results in the formation of an alxga1-xn layer at least with 300 nm thickness in the 1 mum thick gan epilayer. the al fraction x was estimated by xrd to be about 2.5%. x-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the al-rich buffer before gan growth. it is suggested that the underlayer alxga1-xn originated from al diffusion probably provides a compressive stress to the upper part of the gan epilayer, which counterbalances a part of tensile stress in the gan epilayer during cooling down and consequently reduces the cracks of the film effectively. the method using the al diffusion effect to form a thick algan layer is really feasible to achieve the crack-free gan films and obtain a high crystal quality simultaneously. (c) 2004 american institute of physics.
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; LIGHT-EMITTING-DIODES ; INTERMEDIATE LAYER ; INTERLAYERS ; STRESS ; SAPPHIRE ; EPITAXY ; RATIO ; MOCVD
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000224799300040
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2426249
专题	半导体研究所
通讯作者	Lu, Y
作者单位	Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Lu, Y,Cong, GW,Liu, XL,et al. Growth of crack-free gan films on si(111) substrate by using al-rich aln buffer layer[J]. Journal of applied physics,2004,96(9):4982-4988.
APA	Lu, Y.,Cong, GW.,Liu, XL.,Lu, DC.,Zhu, QS.,...&Wang, ZG.(2004).Growth of crack-free gan films on si(111) substrate by using al-rich aln buffer layer.Journal of applied physics,96(9),4982-4988.
MLA	Lu, Y,et al."Growth of crack-free gan films on si(111) substrate by using al-rich aln buffer layer".Journal of applied physics 96.9(2004):4982-4988.

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