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	Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy
	Pan, Wenwu1,2; Zhang, Liyao1; Zhu, Liang3; Li, Yaoyao1; Chen, Xiren3; Wu, Xiaoyan1,2; Zhang, Fan1,4; Shao, Jun3; Wang, Shumin1,5
刊名	Journal of applied physics
	2016-09-14
卷号	120期号:10页码:6
ISSN号	0021-8979
DOI	10.1063/1.4962288
通讯作者	Zhang, liyao(lyzhang@mail.sim.ac.cn)
英文摘要	Photoluminescence (pl) properties of in0.2ga0.8as/gaas0.96bi0.04/in0.2ga0.8as quantum well (qw) grown on gaas substrates by gas source molecular beam epitaxy were studied by varying excitation power and temperature, respectively. the type-ii transition energy shifts from 1.149 ev to 1.192 ev when increasing the excitation power from 10 mw to 150 mw at 4.5 k, which was ascribed to the band-bending effect. on the other hand, the type-ii pl quenches quickly along with fast redshift with the increasing temperature due to the relaxation of the band bending caused by the thermal excitation process. an 8 band k.p model was used to analyze the electronic properties and the band-bending effect in the type-ii qw. the calculated subband levels and transition energy fit well with the experiment results, and two thermal activation energies of 8.7 mev and 50 mev, respectively, are deduced. published by aip publishing.
WOS关键词	TEMPERATURE-DEPENDENCE ; GAAS1-XBIX ; DIODES ; PHOTOLUMINESCENCE ; SEMICONDUCTORS ; ABSORPTION ; GAAS
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	AMER INST PHYSICS
WOS记录号	WOS:000384247900032
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2375736
专题	中国科学院大学
通讯作者	Zhang, Liyao
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Natl Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
推荐引用方式 GB/T 7714	Pan, Wenwu,Zhang, Liyao,Zhu, Liang,et al. Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy[J]. Journal of applied physics,2016,120(10):6.
APA	Pan, Wenwu.,Zhang, Liyao.,Zhu, Liang.,Li, Yaoyao.,Chen, Xiren.,...&Wang, Shumin.(2016).Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy.Journal of applied physics,120(10),6.
MLA	Pan, Wenwu,et al."Optical properties and band bending of ingaas/gaasbi/ingaas type-ii quantum well grown by gas source molecular beam epitaxy".Journal of applied physics 120.10(2016):6.

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