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	Influence of doping in inp buffer on photoluminescence behavior of inpbi
	Wang, Peng1,2; Pan, Wenwu1,2; Cao, Chunfang1; Wu, Xiaoyan1,2; Wang, Shumin1; Gong, Qian1
刊名	Japanese journal of applied physics
	2016-11-01
卷号	55期号:11页码:4
ISSN号	0021-4922
DOI	10.7567/jjap.55.115503
通讯作者	Gong, qian(qgong@mail.sim.ac.cn)
英文摘要	Inp1-xbix epilayers with 1.0% bismuth concentration were grown on inp(001) substrates by gas-source molecular beam epitaxy. silicon and beryllium were doped into the inp buffer layer, and their influences on the photoluminescence (pl) emission of inpbi were investigated. the pl emission of inpbi was found to be intensified by beryllium doping into the inp buffer layer. however, there was no influence of silicon doping. to investigate the reason for the pl intensity enhancement of inpbi, the carrier transport behavior at the interface was also discussed. (c) 2016 the japan society of applied physics
WOS关键词	MOLECULAR-BEAM EPITAXY ; TEMPERATURE ; BISMUTH
WOS研究方向	Physics
WOS类目	Physics, Applied
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000386430300001
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374958
专题	中国科学院大学
通讯作者	Gong, Qian
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst& Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Sch Phys, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Wang, Peng,Pan, Wenwu,Cao, Chunfang,et al. Influence of doping in inp buffer on photoluminescence behavior of inpbi[J]. Japanese journal of applied physics,2016,55(11):4.
APA	Wang, Peng,Pan, Wenwu,Cao, Chunfang,Wu, Xiaoyan,Wang, Shumin,&Gong, Qian.(2016).Influence of doping in inp buffer on photoluminescence behavior of inpbi.Japanese journal of applied physics,55(11),4.
MLA	Wang, Peng,et al."Influence of doping in inp buffer on photoluminescence behavior of inpbi".Japanese journal of applied physics 55.11(2016):4.

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