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	Visible light-assisted high-performance mid-infrared photodetectors based on single inas nanowire
	Fang, Hehai1,6,7; Hu, Weida1,6,7; Wang, Peng1; Guo, Nan1; Luo, Wenjin1,7; Zheng, Dingshan1,2,3; Gong, Fan1,2,3; Luo, Man1; Tian, Hongzheng1; Zhang, Xutao1
刊名	Nano letters
	2016-10-01
卷号	16期号:10页码:6416-6424
关键词	Single inas nanowire Mid-infrared photodetectors Msm photodiode
ISSN号	1530-6984
DOI	10.1021/acs.nanolett.6b02860
通讯作者	Hu, weida(wdhu@mail.sitp.ac.cn) ; Chen, xiaoshuang(xschen@mail.sitp.ac.cn)
英文摘要	One-dimensional inas nanowires (nws) have been widely researched in recent years. features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. however, most reported work about inas nw-based photodetectors is limited to the visible waveband. although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. here in this work, a novel visible light-assisted dark-current suppressing method is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single inas nw photodetectors. this method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (msm) photodiode. these msm photodiodes demonstrate broadband detection from less than 1 mu m to more than 3 mu m and a fast response of tens of microseconds. a high detectivity of similar to 10(12) jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 v with corresponding responsivity of as much as 40 a/w. even for the incident wavelength of 3113 nm, a detectivity of similar to 10(10) jones and a responsivity of 0.6 a/w have been obtained. our work has achieved an extended detection waveband for single inas nw photodetector from visible and near-infrared to mid-infrared. the excellent performance for infrared detection demonstrated the great potential of narrow bandgap nws for future infrared optoelectronic applications.
WOS关键词	NEAR-INFRARED PHOTODETECTORS ; ROOM-TEMPERATURE ; HIGH-DETECTIVITY ; ZNO NANOWIRE ; BROAD-BAND ; SPECTRAL RESPONSE ; SOLAR-CELLS ; QUANTUM-DOT ; GROWTH ; TRANSPORT
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000385469800062
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2374841
专题	中国科学院大学
通讯作者	Hu, Weida; Chen, Xiaoshuang
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Wuhan Univ, Dept Phys, Minist Educ, Wuhan 430072, Peoples R China 3.Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China 4.East China Normal Univ, MOE, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China 5.Hunan Univ, Coll Phys & Microelect, Key Lab Micronano Phys & Technol Hunan Prov, Key Lab Micro Nano Optoelect Devices,Minist Educ, Changsha 410082, Hunan, Peoples R China 6.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Hefei 230026, Peoples R China 7.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Fang, Hehai,Hu, Weida,Wang, Peng,et al. Visible light-assisted high-performance mid-infrared photodetectors based on single inas nanowire[J]. Nano letters,2016,16(10):6416-6424.
APA	Fang, Hehai.,Hu, Weida.,Wang, Peng.,Guo, Nan.,Luo, Wenjin.,...&Lu, Wei.(2016).Visible light-assisted high-performance mid-infrared photodetectors based on single inas nanowire.Nano letters,16(10),6416-6424.
MLA	Fang, Hehai,et al."Visible light-assisted high-performance mid-infrared photodetectors based on single inas nanowire".Nano letters 16.10(2016):6416-6424.

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