The stability of nanostructures fabricated on si(111)-7x7 surface | |
Gao, JN; Yang, HQ; Zhao, YF; Xue, ZQ; Pang, SJ | |
刊名 | Applied physics a-materials science & processing |
1998-03-01 | |
卷号 | 66页码:S783-s786 |
ISSN号 | 0947-8396 |
通讯作者 | Gao, jn() |
英文摘要 | The stability of nanometer- or atomic-scale structures will affect the quality of nanometer-scale devices significantly. in these experiments, an ultrahigh vacuum scanning tunneling microscope was used to fabricate nanometer or atomic structures and to observe the stability of these structures. three typical movements of the atoms in fabricated structures were observed: (1) atom diffusion; (2) atoms transferring to the hole site closing in on an intact unit cell; (3) atoms belonging to a defective unit cell diffused to another defective unit cell. in these movements, the diffusion of atoms had a tendency to recuperate the integrity of the unit cell at all time. the naturally formed monoatomic step and the fabricated bridge structure were studied. it was concluded that the structure maintaining the integrity of the 7 x 7 unit cell was stable. |
WOS关键词 | SCANNING TUNNELING MICROSCOPE ; NANOMETER-SCALE STRUCTURES ; STM |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
出版者 | SPRINGER VERLAG |
WOS记录号 | WOS:000076887100026 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2373822 |
专题 | 物理研究所 |
通讯作者 | Gao, JN |
作者单位 | Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing Lab Vacuum Phys, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Gao, JN,Yang, HQ,Zhao, YF,et al. The stability of nanostructures fabricated on si(111)-7x7 surface[J]. Applied physics a-materials science & processing,1998,66:S783-s786. |
APA | Gao, JN,Yang, HQ,Zhao, YF,Xue, ZQ,&Pang, SJ.(1998).The stability of nanostructures fabricated on si(111)-7x7 surface.Applied physics a-materials science & processing,66,S783-s786. |
MLA | Gao, JN,et al."The stability of nanostructures fabricated on si(111)-7x7 surface".Applied physics a-materials science & processing 66(1998):S783-s786. |
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