| Epitaxial growth of h-bn on templates of various dimensionalities in h-bn-graphene material systems | |
| Chen, Xin1; Yang, He1; Wu, Bin1; Wang, Lifeng1; Fu, Qiang2; Liu, Yunqi1 | |
| 刊名 | Advanced materials
 |
| 2019-03-22 | |
| 卷号 | 31期号:12页码:9 |
| 关键词 | Dimensionality Epitaxy Graphene-hexagonal boron nitride Growth |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201805582 |
| 通讯作者 | Wu, bin(wubin@iccas.ac.cn) ; Liu, yunqi(liuyq@iccas.ac.cn) |
| 英文摘要 | Epitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. beyond this, it is not clear whether the growth of 2d materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. here a library of hexagonal boron nitride epitaxy is presented on graphene-hexagonal boron nitride templates of various dimensionalities, including 2d homo/heteromaterial surface and 1d interfaces of homo/heteromaterials. a framework that allows the description of various kinetic growth by combined geometric and structural modeling is developed. using these tools, the underlying mechanisms for the complex merging process, grain boundary formation, edge-configuration-dependent growth difference, position-dependent size difference, and the correlation among epilayer orientation, crystal structure and geometry are elucidated. this work provides a general viewpoint for understanding epitaxial growth in complex systems. |
| WOS关键词 | HEXAGONAL BORON-NITRIDE ; VAPOR-DEPOSITION GROWTH ; INPLANE HETEROSTRUCTURES ; GRAIN-BOUNDARIES ; MONOLAYER ; INTERFACE ; DOMAINS ; COPPER ; FLAKES ; FILMS |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| WOS记录号 | WOS:000462619000001 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2372642 |
| 专题 | 大连化学物理研究所 |
| 通讯作者 | Wu, Bin; Liu, Yunqi |
| 作者单位 | 1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China 2.Chinese Acad Sci, State Key Lab Catalysis, Collaborat Innovat Ctr Chem Energy Mat iChEM, Dalian Inst Chem Phys, Dalian 116023, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, Xin,Yang, He,Wu, Bin,et al. Epitaxial growth of h-bn on templates of various dimensionalities in h-bn-graphene material systems[J]. Advanced materials,2019,31(12):9. |
| APA | Chen, Xin,Yang, He,Wu, Bin,Wang, Lifeng,Fu, Qiang,&Liu, Yunqi.(2019).Epitaxial growth of h-bn on templates of various dimensionalities in h-bn-graphene material systems.Advanced materials,31(12),9. |
| MLA | Chen, Xin,et al."Epitaxial growth of h-bn on templates of various dimensionalities in h-bn-graphene material systems".Advanced materials 31.12(2019):9. |
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