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	Charge dynamics of the antiferromagnetically ordered Mott insulator
	Han, XJ; Liu, Y1,6; Liu, ZY; Li, X; Chen, J; Liao, HJ; Xie, ZY; Normand, B; Xiang, T4
刊名	NEW JOURNAL OF PHYSICS
	2016
卷号	18页码:103004
关键词	Hubbard model 2-DIMENSIONAL HUBBARD-MODEL Mott insulator NARROW ENERGY-BANDS holon-doublon binding MEAN-FIELD-THEORY spin fluctuations SPECTRAL WEIGHT FUNCTION T-J MODEL ELECTRON CORRELATIONS QUANTUM ANTIFERROMAGNET ANDERSON MODEL SPIN POLARONS FERMI-SURFACE
DOI	http://dx.doi.org/10.1088/1367-2630/18/10/103004
英文摘要	We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Neel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the fundamental physics of the Mott state, both in the antiferromagnetic insulator and at finite temperatures and dopings.
学科主题	Physics
语种	英语
资助机构	National Natural Science Foundation of China [10934008, 10874215, 11174365] ; National Basic Research Program of China [2012CB921704, 2011CB309703] ; China Postdoctoral Science Foundation ; National High Technology Research and Development Program of China [2015AA01A304] ; Foundation of LCP
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/23053]
专题	理论物理研究所_理论物理所1978-2010年知识产出
作者单位	1.Inst Appl Phys & Computat Math, LCP, Beijing 100088, Peoples R China 2.China Acad Engn Phys, Software Ctr High Performance Numer Simulat, Beijing 100088, Peoples R China 3.Chinese Acad Sci, Inst Theoret Phys, Beijing 100190, Peoples R China 4.Xie, Zhi-Yuan; Normand, B.] Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China 6.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Han, XJ,Liu, Y,Liu, ZY,et al. Charge dynamics of the antiferromagnetically ordered Mott insulator[J]. NEW JOURNAL OF PHYSICS,2016,18:103004.
APA	Han, XJ.,Liu, Y.,Liu, ZY.,Li, X.,Chen, J.,...&Xiang, T.(2016).Charge dynamics of the antiferromagnetically ordered Mott insulator.NEW JOURNAL OF PHYSICS,18,103004.
MLA	Han, XJ,et al."Charge dynamics of the antiferromagnetically ordered Mott insulator".NEW JOURNAL OF PHYSICS 18(2016):103004.

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