Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics

doi:10.1103/PhysRevApplied.8.064005

	Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics
	Chen, Zibin ; Hong, Liang ; Wang, Feifei 2; An, Xianghai ; Wang, Xiaolin 3; Ringer, Simon 4; Chen, Long-Qing ; Luo, Haosu 5; Liao, Xiaozhou
刊名	PHYSICAL REVIEW APPLIED
	2017
卷号	8 期号:6
ISSN号	2331-7019
DOI	10.1103/PhysRevApplied.8.064005
英文摘要	Ferroelectric materials have been extensively explored for applications in high-density nonvolatile memory devices because of their ferroelectric-ferroelastic domain-switching behavior under electric loading or mechanical stress. However, the existence of ferroelectric and ferroelastic backswitching would cause significant data loss, which affects the reliability of data storage. Here, we apply in situ transmission electron microscopy and phase-field modeling to explore the unique ferroelastic domain-switching kinetics and the origin of this in relaxor-based Pb(Mg1/3Nb2/3)O-3-33%PbTiO3 single-crystal pillars under electrical and mechanical stimulations. Results showed that the electric-mechanical hysteresis loop shifted for relaxor-based single-crystal pillars because of the low energy levels of domains in the material and the constraint on the pillars, resulting in various mechanically reversible and irreversible domain-switching states. The phenomenon can potentially be used for advanced bit writing and reading in nonvolatile memories, which effectively overcomes the backswitching problem and broadens the types of ferroelectric materials for nonvolatile memory applications.
WOS记录号	WOS:000417133600002
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/26620]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia 2.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA 3.Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China 4.Univ Wollongong, Fac Engn, Australian Inst Innovat Mat, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia 5.Univ Sydney, Australian Inst Nanoscale Sci & Technol, Sydney, NSW 2006, Australia 6.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Chen, Zibin,Hong, Liang,Wang, Feifei,et al. Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics[J]. PHYSICAL REVIEW APPLIED,2017,8(6).
APA	Chen, Zibin.,Hong, Liang.,Wang, Feifei.,An, Xianghai.,Wang, Xiaolin.,...&Liao, Xiaozhou.(2017).Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics.PHYSICAL REVIEW APPLIED,8(6).
MLA	Chen, Zibin,et al."Kinetics of Domain Switching by Mechanical and Electrical Stimulation in Relaxor-Based Ferroelectrics".PHYSICAL REVIEW APPLIED 8.6(2017).