Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures

	Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
	Zhu, Youhua; Tan, Shuxin; Zhang, Jicai(张纪才); Chen, Gang; Egawa, Takashi; Luo, Xiangdong; Sun, Ling
刊名	NANOSCALE RESEARCH LETTERS
	2018
其他题名	Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6296]
专题	苏州纳米技术与纳米仿生研究所_测试分析平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Zhu, Youhua,Tan, Shuxin,Zhang, Jicai,et al. Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures[J]. NANOSCALE RESEARCH LETTERS,2018.
APA	Zhu, Youhua.,Tan, Shuxin.,Zhang, Jicai.,Chen, Gang.,Egawa, Takashi.,...&Sun, Ling.(2018).Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures.NANOSCALE RESEARCH LETTERS.
MLA	Zhu, Youhua,et al."Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures".NANOSCALE RESEARCH LETTERS (2018).