Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si

	Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si
	Liu, Legong; Feng, Meixin(冯美鑫); Liu, Jianxun; Sun, Qian(孙钱); Sun, Xiujian(孙秀建); Zhan, Xiaoning(詹晓宁); Gao, Hongwei(高宏伟); Zhou, Yu(周宇); Wang, Huaibing(王怀兵); Zhao, Hanmin
刊名	Journal of Nanophotonics
	2018
其他题名	Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6231]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Liu, Legong,Feng, Meixin,Liu, Jianxun,et al. Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si[J]. Journal of Nanophotonics,2018.
APA	Liu, Legong.,Feng, Meixin.,Liu, Jianxun.,Sun, Qian.,Sun, Xiujian.,...&Huang, Yingnan.(2018).Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si.Journal of Nanophotonics.
MLA	Liu, Legong,et al."Suppression of unintentional carbon incorporation in AlGaN-based near-ultraviolet light-emitting diode grown on Si".Journal of Nanophotonics (2018).