Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance

	Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance
	Ajima, Yoshiaki; Nakamura, Yuki; Murakami, Kenta; Teramoto, Hideo; Jomen, Ryota; Xing Zhiwei; Dai, Pan(代盼); Lu, Shulong(陆书龙); Uchida, Shiro
刊名	APPLIED PHYSICS EXPRESS
	2018
其他题名	Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6166]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Ajima, Yoshiaki,Nakamura, Yuki,Murakami, Kenta,et al. Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance[J]. APPLIED PHYSICS EXPRESS,2018.
APA	Ajima, Yoshiaki.,Nakamura, Yuki.,Murakami, Kenta.,Teramoto, Hideo.,Jomen, Ryota.,...&Uchida, Shiro.(2018).Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance.APPLIED PHYSICS EXPRESS.
MLA	Ajima, Yoshiaki,et al."Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance".APPLIED PHYSICS EXPRESS (2018).