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	EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS
	Zhu Wenqing[1]; Chen Ling[2]; Liu Xiang[3]; Bai Yu[4]; Wei Bin[5]; Jiang Xueyin[6]; Zhang Zhilin[7]
刊名	INTERNATIONAL JOURNAL OF MODERN PHYSICS B
	2011
卷号	25页码:91-99
关键词	Organic thin-film transistors gate insulator field-effect mobility modified layer
ISSN号	0217-9792
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2301073
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 7.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 8.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 9.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 10.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Zhu Wenqing[1],Chen Ling[2],Liu Xiang[3],et al. EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS[J]. INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2011,25:91-99.
APA	Zhu Wenqing[1].,Chen Ling[2].,Liu Xiang[3].,Bai Yu[4].,Wei Bin[5].,...&Zhang Zhilin[7].(2011).EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS.INTERNATIONAL JOURNAL OF MODERN PHYSICS B,25,91-99.
MLA	Zhu Wenqing[1],et al."EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS".INTERNATIONAL JOURNAL OF MODERN PHYSICS B 25(2011):91-99.

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