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Step and Domain Boundary Effect of Surface Reconstruction to Si(111)-root 3x root 3-Ag
Deng, Dongmei[1]; Sun, Lina[2]; Dai, Yurong[3]; Cao, Shixun[4]; Bai, Lihua[5]; Luo, Liqiang[6]; Zhang, Jincang[7]
2012
会议名称ADVANCES IN CHEMISTRY RESEARCH II, PTS 1-3
会议日期2012-07-13
关键词Si(111) root 3x root 3-Ag second-harmonic generation step domain boundary
页码357-361
URL标识查看原文
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/2298696
专题上海大学
作者单位1.[1]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
2.[2]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
3.[3]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
4.[4]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
5.[5]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
6.[6]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
7.[7]Shanghai Univ, Coll Sci, Shanghai 200444, Peoples R China.
推荐引用方式
GB/T 7714
Deng, Dongmei[1],Sun, Lina[2],Dai, Yurong[3],et al. Step and Domain Boundary Effect of Surface Reconstruction to Si(111)-root 3x root 3-Ag[C]. 见:ADVANCES IN CHEMISTRY RESEARCH II, PTS 1-3. 2012-07-13.
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