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	Feasibility of using sputtered AlOx, film as gate insulator for high performance InGaZnO-TFTs
	Li, Jun[1]; Zhang, Jian-Hua[2]; Ding, Xing-Wei[3]; Zhu, Wen-Qing[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2014
卷号	65页码:14-21
关键词	Thin film transistor InGaZnO AlOx insulator
ISSN号	0749-6036
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2275898
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 6.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 7.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 9.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Zhang, Jian-Hua[2],Ding, Xing-Wei[3],et al. Feasibility of using sputtered AlOx, film as gate insulator for high performance InGaZnO-TFTs[J]. SUPERLATTICES AND MICROSTRUCTURES,2014,65:14-21.
APA	Li, Jun[1],Zhang, Jian-Hua[2],Ding, Xing-Wei[3],Zhu, Wen-Qing[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2014).Feasibility of using sputtered AlOx, film as gate insulator for high performance InGaZnO-TFTs.SUPERLATTICES AND MICROSTRUCTURES,65,14-21.
MLA	Li, Jun[1],et al."Feasibility of using sputtered AlOx, film as gate insulator for high performance InGaZnO-TFTs".SUPERLATTICES AND MICROSTRUCTURES 65(2014):14-21.

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