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	Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure
	Yin, Luqiao[1]; Bai, Yang[2]; Nan, Tingting[3]; Zhang, Jianhua[4]
刊名	PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
	2015
卷号	212页码:1725-1730
关键词	gallium nitrides light-emitting diodes optoelectronic performances through-via structures
ISSN号	1862-6300
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2268703
专题	上海大学
作者单位	1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 5.[3]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 7.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 8.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Yin, Luqiao[1],Bai, Yang[2],Nan, Tingting[3],et al. Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015,212:1725-1730.
APA	Yin, Luqiao[1],Bai, Yang[2],Nan, Tingting[3],&Zhang, Jianhua[4].(2015).Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,212,1725-1730.
MLA	Yin, Luqiao[1],et al."Performance enhancement of gallium-nitride-based flip-chip light-emitting diode with through-via structure".PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 212(2015):1725-1730.

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