QQ客服 官方微博 反馈留言

	Study on Growth Conditions for High Quality Hydrogenated Amorphous Silicon Oxide Films
	Jiang, Chao-Chao[1]; Jin, Jing[2]; Qu, Xing-Ling[3]; Huang, Lu[4]; Liu, Can[5]; Min, Jia-Hua[6]; Shi, Wei-Min[7]
	2016
会议名称	2nd Annual International Conference on Advanced Material Engineering (AME)
会议日期	2016-01-01
关键词	A-SiOx:H Window layer Fourier transform infrared spectroscopy Optical band gap
页码	986-990
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2235099
专题	上海大学
作者单位	1.[1]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 2.[2]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 3.[3]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 4.[4]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 5.[5]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 6.[6]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China. 7.[7]Shanghai Univ, Coll Mat Sci & Engn, 333 Nanchen Rd, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Jiang, Chao-Chao[1],Jin, Jing[2],Qu, Xing-Ling[3],et al. Study on Growth Conditions for High Quality Hydrogenated Amorphous Silicon Oxide Films[C]. 见:2nd Annual International Conference on Advanced Material Engineering (AME). 2016-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。