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	Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se-2 solar cells
	Yang, J.[1]; Du, H. W.[2]; Li, Y.[3]; Gao, M.[4]; Wan, Y. Z.[5]; Xu, F.[6]; Ma, Z. Q.[7]
刊名	AIP ADVANCES
	2016
卷号	6页码:085215
ISSN号	2158-3226
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2230653
专题	上海大学
作者单位	1.[1]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Dept Phys, SHU SolarE R&D Lab, Shangda Rd 99, Shanghai 200444, Peoples R China. 8.Shanghai Univ, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Yang, J.[1],Du, H. W.[2],Li, Y.[3],et al. Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se-2 solar cells[J]. AIP ADVANCES,2016,6:085215.
APA	Yang, J.[1].,Du, H. W.[2].,Li, Y.[3].,Gao, M.[4].,Wan, Y. Z.[5].,...&Ma, Z. Q.[7].(2016).Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se-2 solar cells.AIP ADVANCES,6,085215.
MLA	Yang, J.[1],et al."Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se-2 solar cells".AIP ADVANCES 6(2016):085215.

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