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	Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors (EI收录SCI收录)
	Shan, Dongfang[1,2]; Han, Dedong[1]; Huang, Fuqing[1,2]; Tian, Yu[1]; Zhang, Suoming[1,2]; Qi, Lin[1,2]; Cong, Yingying[1]; Zhang, Shengdong[1,2]; Zhang, Xing[1]; Wang, Yi[1]
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2014
卷号	53
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2216556
专题	华南理工大学
作者单位	1.[1]Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 2.[2]Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Shan, Dongfang[1,2],Han, Dedong[1],Huang, Fuqing[1,2],等. Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors (EI收录SCI收录)[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53.
APA	Shan, Dongfang[1,2].,Han, Dedong[1].,Huang, Fuqing[1,2].,Tian, Yu[1].,Zhang, Suoming[1,2].,...&Wang, Yi[1].(2014).Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors (EI收录SCI收录).JAPANESE JOURNAL OF APPLIED PHYSICS,53.
MLA	Shan, Dongfang[1,2],et al."Fabrication and characteristics of high-performance and high-stability aluminum-doped zinc oxide thin-film transistors (EI收录SCI收录)".JAPANESE JOURNAL OF APPLIED PHYSICS 53(2014).

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