| The Degradation of High Power Gallium Nitride Light-emitting Diodes | |
| He PiaoPiao[1]; Zhou JiPeng[2]; Yin LuQiao[3] | |
| 2017 | |
| 会议名称 | 2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) |
| 会议日期 | 2017-01-01 |
| 关键词 | Gallium nitride high power LED degradation defect concentration |
| 页码 | 440-443 |
| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2196592 |
| 专题 | 上海大学 |
| 作者单位 | 1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mechatron & Automat, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. |
| 推荐引用方式 GB/T 7714 | He PiaoPiao[1],Zhou JiPeng[2],Yin LuQiao[3]. The Degradation of High Power Gallium Nitride Light-emitting Diodes[C]. 见:2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT). 2017-01-01. |
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