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	Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1-xO3semiconductor (EI收录SCI收录)
	Song, Wei[1]; Lan, Linfeng[1]; Xiao, Peng[1]; Lin, Zhenguo[1]; Sun, Sheng[1]; Li, Yuzhi[1]; Song, Erlong[1]; Gao, Peixiong[1]; Zhang, Peng[1]; Xu, Hua[1]
刊名	Journal of Physics D: Applied Physics
	2016
卷号	49
关键词	Oxide films Oxide semiconductors Oxygen vacancies Stability Temperature Thin films Transistors
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2194551
专题	华南理工大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 2.510640, China
推荐引用方式 GB/T 7714	Song, Wei[1],Lan, Linfeng[1],Xiao, Peng[1],等. Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1-xO3semiconductor (EI收录SCI收录)[J]. Journal of Physics D: Applied Physics,2016,49.
APA	Song, Wei[1].,Lan, Linfeng[1].,Xiao, Peng[1].,Lin, Zhenguo[1].,Sun, Sheng[1].,...&Peng, Junbiao[1].(2016).Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1-xO3semiconductor (EI收录SCI收录).Journal of Physics D: Applied Physics,49.
MLA	Song, Wei[1],et al."Low-temperature, high-stability, flexible thin-film transistors with a novel ScxIn1-xO3semiconductor (EI收录SCI收录)".Journal of Physics D: Applied Physics 49(2016).

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