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Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations
Ahmad, Ishaq[1]; Madhuku, M.[2]; Sadaf, Adeela[3]; Khan, Shakil[4]; Hussain, Javaid[5]; Ali, Awais[6]; Wan, D.[7]; Ilyas, S. Z.[8]; Mola, G.[9]; Waheed, Abdul[10]
刊名MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2017
卷号64页码:95-100
关键词Semiconductor Thin films Ions irradiations X-ray diffraction Raman spectroscopy
ISSN号1369-8001
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2190401
专题上海大学
作者单位1.[1]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan.
2.[2]Natl Res Fdn, iThemba LABS, P Bag X11, ZA-2050 Johannesburg, South Africa.
3.[3]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan.
4.Allama Iqbal Open Univ, Phys Dept, Islamabad, Pakistan.
5.[4]PIEAS, Dept Met & Mat Engn, Islamabad 45650, Pakistan.
6.[5]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan.
7.[6]COMSATS Inst Informat Technol, Ctr Micro & Nano Devices, Dept Phys, Islamabad, Pakistan.
8.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China.
9.[8]Allama Iqbal Open Univ, Phys Dept, Islamabad, Pakistan.
10.[9]Univ Kwazulu Natal, Sch Chem & Phys, Pietermaritzburg Campus,Private Bag X01, ZA-3209 Scottsville, South Africa.
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GB/T 7714
Ahmad, Ishaq[1],Madhuku, M.[2],Sadaf, Adeela[3],et al. Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,64:95-100.
APA Ahmad, Ishaq[1].,Madhuku, M.[2].,Sadaf, Adeela[3].,Khan, Shakil[4].,Hussain, Javaid[5].,...&Rasheed, Muhammad Asim[11].(2017).Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,64,95-100.
MLA Ahmad, Ishaq[1],et al."Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 64(2017):95-100.
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