Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations | |
Ahmad, Ishaq[1]; Madhuku, M.[2]; Sadaf, Adeela[3]; Khan, Shakil[4]; Hussain, Javaid[5]; Ali, Awais[6]; Wan, D.[7]; Ilyas, S. Z.[8]; Mola, G.[9]; Waheed, Abdul[10] | |
刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING |
2017 | |
卷号 | 64页码:95-100 |
关键词 | Semiconductor Thin films Ions irradiations X-ray diffraction Raman spectroscopy |
ISSN号 | 1369-8001 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2190401 |
专题 | 上海大学 |
作者单位 | 1.[1]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan. 2.[2]Natl Res Fdn, iThemba LABS, P Bag X11, ZA-2050 Johannesburg, South Africa. 3.[3]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan. 4.Allama Iqbal Open Univ, Phys Dept, Islamabad, Pakistan. 5.[4]PIEAS, Dept Met & Mat Engn, Islamabad 45650, Pakistan. 6.[5]Quaid I Azam Univ, Natl Ctr Phys, Islamabad 44000, Pakistan. 7.[6]COMSATS Inst Informat Technol, Ctr Micro & Nano Devices, Dept Phys, Islamabad, Pakistan. 8.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 9.[8]Allama Iqbal Open Univ, Phys Dept, Islamabad, Pakistan. 10.[9]Univ Kwazulu Natal, Sch Chem & Phys, Pietermaritzburg Campus,Private Bag X01, ZA-3209 Scottsville, South Africa. |
推荐引用方式 GB/T 7714 | Ahmad, Ishaq[1],Madhuku, M.[2],Sadaf, Adeela[3],et al. Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2017,64:95-100. |
APA | Ahmad, Ishaq[1].,Madhuku, M.[2].,Sadaf, Adeela[3].,Khan, Shakil[4].,Hussain, Javaid[5].,...&Rasheed, Muhammad Asim[11].(2017).Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,64,95-100. |
MLA | Ahmad, Ishaq[1],et al."Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 64(2017):95-100. |
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