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	Effects of active element Ti on interfacial microstructure and bonding strength of SiO2/ SiO2joints soldered using Sn3.5Ag4Ti(Ce,Ga) alloy filler (EI收录)
	Cheng, L.X.[1]; Liu, M.R.[2]; Wang, X.Q.[3]; Yan, B.H.[1]; Li, G.Y.[4]
刊名	Materials Science and Engineering A
	2017
卷号	680页码:317-323
关键词	Bonding Cerium alloys Chemical bonds Fracture Gallium Gallium alloys Interfaces (materials) Intermetallics Low temperature engineering Microstructure Silica Silicon oxides Soldering Substrates Temperature Thermodynamics Titanium
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2187991
专题	华南理工大学
作者单位	1.[1] College of Electronic Engineering, South China Agricultural University, Wushan R. D., Tianhe District, Guangzhou 2.510642, China 3.[2] College of Physics and Information Science, Hunan Normal University, LuShan R. D., Yuelu District, Changsha 4.410081, China 5.[3] China Electronic Product Reliability and Environmental Testing Research Institute, Dongguanzhuang R. D., Tianhe District, Guangzhou 6.510610, China 7.[4] School of Electronic and Information Engineering, South China University of Technology, Wushan R. D., Tianhe District, Guangzhou 8.510641, China
推荐引用方式 GB/T 7714	Cheng, L.X.[1],Liu, M.R.[2],Wang, X.Q.[3],等. Effects of active element Ti on interfacial microstructure and bonding strength of SiO2/ SiO2joints soldered using Sn3.5Ag4Ti(Ce,Ga) alloy filler (EI收录)[J]. Materials Science and Engineering A,2017,680:317-323.
APA	Cheng, L.X.[1],Liu, M.R.[2],Wang, X.Q.[3],Yan, B.H.[1],&Li, G.Y.[4].(2017).Effects of active element Ti on interfacial microstructure and bonding strength of SiO2/ SiO2joints soldered using Sn3.5Ag4Ti(Ce,Ga) alloy filler (EI收录).Materials Science and Engineering A,680,317-323.
MLA	Cheng, L.X.[1],et al."Effects of active element Ti on interfacial microstructure and bonding strength of SiO2/ SiO2joints soldered using Sn3.5Ag4Ti(Ce,Ga) alloy filler (EI收录)".Materials Science and Engineering A 680(2017):317-323.

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