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	High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer
	Hu, Shiben[1]; Lu, Kuankuan[1]; Ning, Honglong[1]; Zheng, Zeke[1]; Zhang, Hongke[1]; Fang, Zhiqiang[1]; Yao, Rihui[1]; Xu, Miao[1]; Wang, Lei[1]; Lan, Linfeng[1]
刊名	IEEE ELECTRON DEVICE LETTERS
	2017
卷号	38页码:879-882
关键词	Aluminum oxide copper thin film transistors
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2185753
专题	华南理工大学
作者单位	1.[1]South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Peoples R China 2.[2]South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China 3.[3]South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Hu, Shiben[1],Lu, Kuankuan[1],Ning, Honglong[1],et al. High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer[J]. IEEE ELECTRON DEVICE LETTERS,2017,38:879-882.
APA	Hu, Shiben[1].,Lu, Kuankuan[1].,Ning, Honglong[1].,Zheng, Zeke[1].,Zhang, Hongke[1].,...&Lu, Xubing[2,3].(2017).High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer.IEEE ELECTRON DEVICE LETTERS,38,879-882.
MLA	Hu, Shiben[1],et al."High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer".IEEE ELECTRON DEVICE LETTERS 38(2017):879-882.

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