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	Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol-Gel Method
	He, Bo[1]; Xu, Jing[2]; Ning, HuanPo[3]; Zhao, Lei[4]; Xing, HuaiZhong[5]; Chang, Chien-Cheng[6]; Qin, YuMing[7]; Zhang, Lei[8]
刊名	INTERNATIONAL JOURNAL OF NANOSCIENCE
	2017
卷号	16
关键词	CuO film sol-gel method heterojunction current-voltage (I-V) characteristics
ISSN号	0219-581X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2182195
专题	上海大学
作者单位	1.[1]Donghua Univ, Dept Appl Phys, 2999 Renmin Rd North, Shanghai 201620, Peoples R China. 2.Guangxi Univ, Sch Mech Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Nanning 530004, Peoples R China. 3.East China Univ Sci & Technol, Minist Educ, Key Lab Ultrafine Mat, Shanghai 200237, Peoples R China. 4.Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China. 5.[2]Shanghai Univ, Instrumental Anal & Res Ctr, Shanghai 200444, Peoples R China. 6.[3]Donghua Univ, Dept Appl Phys, 2999 Renmin Rd North, Shanghai 201620, Peoples R China. 7.[4]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China. 8.[5]Donghua Univ, Dept Appl Phys, 2999 Renmin Rd North, Shanghai 201620, Peoples R China. 9.[6]Guangxi Univ, Sch Mech Engn, Guangxi Key Lab Mfg Syst & Adv Mfg Technol, Nanning 530004, Peoples R China. 10.[7]Donghua Univ, Inst Nonlinear Sci, 2999 Renmin Rd North, Shanghai 201620, Peoples R China.
推荐引用方式 GB/T 7714	He, Bo[1],Xu, Jing[2],Ning, HuanPo[3],et al. Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol-Gel Method[J]. INTERNATIONAL JOURNAL OF NANOSCIENCE,2017,16.
APA	He, Bo[1].,Xu, Jing[2].,Ning, HuanPo[3].,Zhao, Lei[4].,Xing, HuaiZhong[5].,...&Zhang, Lei[8].(2017).Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol-Gel Method.INTERNATIONAL JOURNAL OF NANOSCIENCE,16.
MLA	He, Bo[1],et al."Preparation and Optoelectrical Properties of p-CuO/n-Si Heterojunction by a Simple Sol-Gel Method".INTERNATIONAL JOURNAL OF NANOSCIENCE 16(2017).

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