The graphene/n-Ge(110) interface: structure, doping, and electronic properties | |
Tesch, Julia[1]; Paschke, Fabian[2]; Fonin, Mikhail[3]; Wietstruk, Marko[4]; Boettcher, Stefan[5]; Koch, Roland J.[6]; Bostwick, Aaron[7]; Jozwiak, Chris[8]; Rotenberg, Eli[9]; Makarova, Anna[10] | |
刊名 | NANOSCALE |
2018 | |
卷号 | 10页码:6088-6098 |
ISSN号 | 2040-3364 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2179836 |
专题 | 上海大学 |
作者单位 | 1.[1]Univ Konstanz, Fachbereich Phys, D-78457 Constance, Germany. 2.[2]Univ Konstanz, Fachbereich Phys, D-78457 Constance, Germany. 3.[3]Univ Konstanz, Fachbereich Phys, D-78457 Constance, Germany. 4.[4]SPECS Surface Nanoanal GmbH, Voltastr 5, D-13355 Berlin, Germany. 5.[5]SPECS Surface Nanoanal GmbH, Voltastr 5, D-13355 Berlin, Germany. 6.[6]EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA. 7.[7]EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA. 8.[8]EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA. 9.[9]EO Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA. 10.[10]Tech Univ Dresden, Inst Festkorperphys, D-01062 Dresden, Germany. |
推荐引用方式 GB/T 7714 | Tesch, Julia[1],Paschke, Fabian[2],Fonin, Mikhail[3],et al. The graphene/n-Ge(110) interface: structure, doping, and electronic properties[J]. NANOSCALE,2018,10:6088-6098. |
APA | Tesch, Julia[1].,Paschke, Fabian[2].,Fonin, Mikhail[3].,Wietstruk, Marko[4].,Boettcher, Stefan[5].,...&Dedkov, Yuriy[13].(2018).The graphene/n-Ge(110) interface: structure, doping, and electronic properties.NANOSCALE,10,6088-6098. |
MLA | Tesch, Julia[1],et al."The graphene/n-Ge(110) interface: structure, doping, and electronic properties".NANOSCALE 10(2018):6088-6098. |
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