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	High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT
	Li, Jun[1]; Zhong, De-Yao[2]; Huang, Chuan-Xin[3]; Li, Xi-Feng[4]; Zhang, Jian-Hua[5]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
卷号	65页码:2838-2843
关键词	Inverter solution process stability thin-film transistors (TFTs)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2174005
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Zhong, De-Yao[2],Huang, Chuan-Xin[3],et al. High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018,65:2838-2843.
APA	Li, Jun[1],Zhong, De-Yao[2],Huang, Chuan-Xin[3],Li, Xi-Feng[4],&Zhang, Jian-Hua[5].(2018).High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT.IEEE TRANSACTIONS ON ELECTRON DEVICES,65,2838-2843.
MLA	Li, Jun[1],et al."High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT".IEEE TRANSACTIONS ON ELECTRON DEVICES 65(2018):2838-2843.

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