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	Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies
	Cunping Qin[1]; Jun Yang[2]; Bowen Wang[3]; Tao Xu[4]; Xingwei Ding[5]
刊名	Optoelectronics and Advanced Materials-Rapid Communications
	2018
页码	407-412
ISSN号	1842-6573
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2173594
专题	上海大学
推荐引用方式 GB/T 7714	Cunping Qin[1],Jun Yang[2],Bowen Wang[3],et al. Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies[J]. Optoelectronics and Advanced Materials-Rapid Communications,2018:407-412.
APA	Cunping Qin[1],Jun Yang[2],Bowen Wang[3],Tao Xu[4],&Xingwei Ding[5].(2018).Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies.Optoelectronics and Advanced Materials-Rapid Communications,407-412.
MLA	Cunping Qin[1],et al."Optimization of annealing conditions in air for InGaZnO thin-film transistors by temperature-stress studies".Optoelectronics and Advanced Materials-Rapid Communications (2018):407-412.

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