QQ客服 官方微博 反馈留言

	Atomic Layer Deposited ZrxAl1-xOy Film as High Gate Insulator for High Performance ZnSnO Thin Film Transistor
	Li, Jun[1]; Zhou, You-Hang[2]; Zhong, De-Yao[3]; Huang, Chuan-Xin[4]; Huang, Jian[5]; Zhang, Jian-Hua[6]
刊名	ELECTRONIC MATERIALS LETTERS
	2018
卷号	14页码:669-677
关键词	Atomic layer deposition ZrxAl1-xOy thin films ZTO TFTs NBIS stability TS stability
ISSN号	1738-8090
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2171878
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 6.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 7.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.[6]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Zhou, You-Hang[2],Zhong, De-Yao[3],et al. Atomic Layer Deposited ZrxAl1-xOy Film as High Gate Insulator for High Performance ZnSnO Thin Film Transistor[J]. ELECTRONIC MATERIALS LETTERS,2018,14:669-677.
APA	Li, Jun[1],Zhou, You-Hang[2],Zhong, De-Yao[3],Huang, Chuan-Xin[4],Huang, Jian[5],&Zhang, Jian-Hua[6].(2018).Atomic Layer Deposited ZrxAl1-xOy Film as High Gate Insulator for High Performance ZnSnO Thin Film Transistor.ELECTRONIC MATERIALS LETTERS,14,669-677.
MLA	Li, Jun[1],et al."Atomic Layer Deposited ZrxAl1-xOy Film as High Gate Insulator for High Performance ZnSnO Thin Film Transistor".ELECTRONIC MATERIALS LETTERS 14(2018):669-677.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。