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	Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor
	Gu, Le[1]; Yang, Shuai[2]; Miao, Bin[3]; Gu, Zhiqi[4]; Wang, Jin[5]; Sun, Wei[6]; Wu, Dongmin[7]; Li, Jiadong[8]
刊名	ANALYST
	2019
卷号	144页码:663-668
ISSN号	0003-2654
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164838
专题	上海大学
作者单位	1.[1]Chengdu Univ Technol, Coll Nucl Technol & Automat Engn, Chengdu 610059, Sichuan, Peoples R China. 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China. 3.[2]Chengdu Univ Technol, Coll Nucl Technol & Automat Engn, Chengdu 610059, Sichuan, Peoples R China. 4.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China. 5.[3]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China. 6.[4]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China. 7.Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China. 8.[5]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, I Lab, Suzhou 215125, Peoples R China. 9.Shanghai Univ, Coll Mat Sci & Engn, Shanghai 200444, Peoples R China. 10.[6]Chengdu Univ Technol, Coll Nucl Technol & Automat Engn, Chengdu 610059, Sichuan, Peoples R China.
推荐引用方式 GB/T 7714	Gu, Le[1],Yang, Shuai[2],Miao, Bin[3],et al. Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor[J]. ANALYST,2019,144:663-668.
APA	Gu, Le[1].,Yang, Shuai[2].,Miao, Bin[3].,Gu, Zhiqi[4].,Wang, Jin[5].,...&Li, Jiadong[8].(2019).Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor.ANALYST,144,663-668.
MLA	Gu, Le[1],et al."Electrical detection of trace zinc ions with an extended gate-AlGaN/GaN high electron mobility sensor".ANALYST 144(2019):663-668.

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