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	Process optimization and device variation of Mg-doped ZnO FBARs
	Duan, Franklin Li[1]; Yang, Zhi[2]; Ji, Zhonglin[3]; Weng, Haotian[4]; Xie, Ziyi[5]; Shen, Allegro[6]; Mi, Shijie[7]; Chen, Xi[8]; Chen, Yigang[9]; Liu, Qianhui[10]
刊名	SOLID-STATE ELECTRONICS
	2019
卷号	151页码:11-17
关键词	Piezoelectric FBAR RF resonator Bulk wave effects & devices
ISSN号	0038-1101
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164689
专题	上海大学
作者单位	1.[1]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 2.[2]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 3.[3]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 4.[4]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 5.[5]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 6.[6]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 7.[7]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 8.[8]Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Shanghai 200240, Peoples R China. 9.[9]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 10.[10]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Duan, Franklin Li[1],Yang, Zhi[2],Ji, Zhonglin[3],et al. Process optimization and device variation of Mg-doped ZnO FBARs[J]. SOLID-STATE ELECTRONICS,2019,151:11-17.
APA	Duan, Franklin Li[1].,Yang, Zhi[2].,Ji, Zhonglin[3].,Weng, Haotian[4].,Xie, Ziyi[5].,...&Liu, Qianhui[10].(2019).Process optimization and device variation of Mg-doped ZnO FBARs.SOLID-STATE ELECTRONICS,151,11-17.
MLA	Duan, Franklin Li[1],et al."Process optimization and device variation of Mg-doped ZnO FBARs".SOLID-STATE ELECTRONICS 151(2019):11-17.

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