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	Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector
	Shi, Haozhi[1]; Zhang, Jijun[2]; Ling, Liwen[3]; Zhao, Shuhao[4]; Min, Jiahua[5]; Liang, Xiaoyan[6]; Huang, Jian[7]; Tang, Ke[8]; Wang, Linjun[9]
刊名	JOURNAL OF CRYSTAL GROWTH
	2019
卷号	507页码:23-30
关键词	Semiconducting II-VI materials Traveling heater method Redissolution process Defects Carrier transport uniformity
ISSN号	0022-0248
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2164319
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 9.[9]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Shi, Haozhi[1],Zhang, Jijun[2],Ling, Liwen[3],et al. Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector[J]. JOURNAL OF CRYSTAL GROWTH,2019,507:23-30.
APA	Shi, Haozhi[1].,Zhang, Jijun[2].,Ling, Liwen[3].,Zhao, Shuhao[4].,Min, Jiahua[5].,...&Wang, Linjun[9].(2019).Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector.JOURNAL OF CRYSTAL GROWTH,507,23-30.
MLA	Shi, Haozhi[1],et al."Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector".JOURNAL OF CRYSTAL GROWTH 507(2019):23-30.

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