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Electric field modulated electronic property in InAs/GaSb quantum well
Ma,Yun; Yang,Huan; Wu,Keyue; Wei,Xiangfei
刊名2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC)
2017
页码587-590
关键词InAs/GaSb quantum well External electric field Form-factor Exchange self-energy
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内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2159806
专题安徽大学
作者单位1.West Anhui Univ, Reseach Ctr Atmos Mol & Opt Applicat, Luan 237012, Anhui, Peoples R China
2.West Anhui Univ, Sch Elect & Photoelect Engn, Luan 237012, Peoples R China
推荐引用方式
GB/T 7714
Ma,Yun,Yang,Huan,Wu,Keyue,et al. Electric field modulated electronic property in InAs/GaSb quantum well[J]. 2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC),2017:587-590.
APA Ma,Yun,Yang,Huan,Wu,Keyue,&Wei,Xiangfei.(2017).Electric field modulated electronic property in InAs/GaSb quantum well.2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC),587-590.
MLA Ma,Yun,et al."Electric field modulated electronic property in InAs/GaSb quantum well".2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC) (2017):587-590.
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