Electric field modulated electronic property in InAs/GaSb quantum well | |
Ma,Yun; Yang,Huan; Wu,Keyue; Wei,Xiangfei | |
刊名 | 2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC)
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2017 | |
页码 | 587-590 |
关键词 | InAs/GaSb quantum well External electric field Form-factor Exchange self-energy |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2159806 |
专题 | 安徽大学 |
作者单位 | 1.West Anhui Univ, Reseach Ctr Atmos Mol & Opt Applicat, Luan 237012, Anhui, Peoples R China 2.West Anhui Univ, Sch Elect & Photoelect Engn, Luan 237012, Peoples R China |
推荐引用方式 GB/T 7714 | Ma,Yun,Yang,Huan,Wu,Keyue,et al. Electric field modulated electronic property in InAs/GaSb quantum well[J]. 2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC),2017:587-590. |
APA | Ma,Yun,Yang,Huan,Wu,Keyue,&Wei,Xiangfei.(2017).Electric field modulated electronic property in InAs/GaSb quantum well.2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC),587-590. |
MLA | Ma,Yun,et al."Electric field modulated electronic property in InAs/GaSb quantum well".2017 32ND YOUTH ACADEMIC ANNUAL CONFERENCE OF CHINESE ASSOCIATION OF AUTOMATION (YAC) (2017):587-590. |
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