Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure | |
Jin,P.; Xiao,D. Q.; Zheng,C. Y.; Sun,Z. Q.; Liu,M.; Gao,J.; Deng,B.; He,G. | |
刊名 | Journal of Alloys and Compounds
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2016 | |
卷号 | Vol.662页码:339-347 |
关键词 | CHEMICAL-VAPOR-DEPOSITION SPUTTERED HAFNIUM OXIDE GATE DIELECTRICS RATIO MODULATION COATINGS LAYER |
ISSN号 | 0925-8388 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2159642 |
专题 | 安徽大学 |
作者单位 | 1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Jin,P.,Xiao,D. Q.,Zheng,C. Y.,et al. Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure[J]. Journal of Alloys and Compounds,2016,Vol.662:339-347. |
APA | Jin,P..,Xiao,D. Q..,Zheng,C. Y..,Sun,Z. Q..,Liu,M..,...&He,G..(2016).Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure.Journal of Alloys and Compounds,Vol.662,339-347. |
MLA | Jin,P.,et al."Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure".Journal of Alloys and Compounds Vol.662(2016):339-347. |
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