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Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure
Jin,P.; Xiao,D. Q.; Zheng,C. Y.; Sun,Z. Q.; Liu,M.; Gao,J.; Deng,B.; He,G.
刊名Journal of Alloys and Compounds
2016
卷号Vol.662页码:339-347
关键词CHEMICAL-VAPOR-DEPOSITION SPUTTERED HAFNIUM OXIDE GATE DIELECTRICS RATIO MODULATION COATINGS LAYER
ISSN号0925-8388
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2159642
专题安徽大学
作者单位1.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China
2.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式
GB/T 7714
Jin,P.,Xiao,D. Q.,Zheng,C. Y.,et al. Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure[J]. Journal of Alloys and Compounds,2016,Vol.662:339-347.
APA Jin,P..,Xiao,D. Q..,Zheng,C. Y..,Sun,Z. Q..,Liu,M..,...&He,G..(2016).Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure.Journal of Alloys and Compounds,Vol.662,339-347.
MLA Jin,P.,et al."Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure".Journal of Alloys and Compounds Vol.662(2016):339-347.
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