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	Bit-line self cutting-off technique to combat excessive leakage current for high-performance SRAM
	Li,Ruixing; Guan,Lijun; Li,Zhengping; Zhu,Jiajun; Peng,Chunyu; Wu,Xiulong
刊名	Journal of Computational Information Systems
	2015
卷号	Vol.11 No.17页码:6303-6309
ISSN号	1553-9105
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158991
专题	安徽大学
作者单位	School of Electronics and Information Engineering,Anhui University, Hefei, China
推荐引用方式 GB/T 7714	Li,Ruixing,Guan,Lijun,Li,Zhengping,et al. Bit-line self cutting-off technique to combat excessive leakage current for high-performance SRAM[J]. Journal of Computational Information Systems,2015,Vol.11 No.17:6303-6309.
APA	Li,Ruixing,Guan,Lijun,Li,Zhengping,Zhu,Jiajun,Peng,Chunyu,&Wu,Xiulong.(2015).Bit-line self cutting-off technique to combat excessive leakage current for high-performance SRAM.Journal of Computational Information Systems,Vol.11 No.17,6303-6309.
MLA	Li,Ruixing,et al."Bit-line self cutting-off technique to combat excessive leakage current for high-performance SRAM".Journal of Computational Information Systems Vol.11 No.17(2015):6303-6309.

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