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	Resistive switching memory effect of ZrO2 films with Zr+ implanted.
	Chen,Junning; Liu,Ming; Guan,Weihua; Liu,Qi; Long,Shibing; Jia,Rui
刊名	Applied Physics Letters
	2008
卷号	Vol.92 No.1页码:N.PAG
关键词	METALLIC films ION implantation SPACE charge IONS ELECTRON beams MATHEMATICAL models
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158571
专题	安徽大学
作者单位	1.College of Electronics and Technology, Anhui University, Hefei 230039, 2.Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029,
推荐引用方式 GB/T 7714	Chen,Junning,Liu,Ming,Guan,Weihua,et al. Resistive switching memory effect of ZrO2 films with Zr+ implanted.[J]. Applied Physics Letters,2008,Vol.92 No.1:N.PAG.
APA	Chen,Junning,Liu,Ming,Guan,Weihua,Liu,Qi,Long,Shibing,&Jia,Rui.(2008).Resistive switching memory effect of ZrO<sub>2</sub> films with Zr<sup>+</sup> implanted..Applied Physics Letters,Vol.92 No.1,N.PAG.
MLA	Chen,Junning,et al."Resistive switching memory effect of ZrO<sub>2</sub> films with Zr<sup>+</sup> implanted.".Applied Physics Letters Vol.92 No.1(2008):N.PAG.

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