| Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics | |
| Jiweng Zhang; Mao Liu; Lide Zhang; Juan Gao; Xuefei Chen; Ming Fang; Gang He; Rui Ma; Guangtao Fei; Guoliang Shang | |
| 刊名 | Journal of Alloys and Compounds
 |
| 2015 | |
| 卷号 | Vol.646页码:310-314 |
| 关键词 | Gd-doped HfO thin film Rapid thermal annealing Interfacial properties Electrical properties |
| ISSN号 | 0925-8388 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2157668 |
| 专题 | 安徽大学 |
| 作者单位 | 1.School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, PR China 2.a Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China 3.Co-operative Innovation Research Center for Weak Signal-Detecting Materials and Devices Integration, Anhui University, Hefei 230601, PR China |
| 推荐引用方式 GB/T 7714 | Jiweng Zhang,Mao Liu,Lide Zhang,et al. Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics[J]. Journal of Alloys and Compounds,2015,Vol.646:310-314. |
| APA | Jiweng Zhang.,Mao Liu.,Lide Zhang.,Juan Gao.,Xuefei Chen.,...&Guoliang Shang.(2015).Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics.Journal of Alloys and Compounds,Vol.646,310-314. |
| MLA | Jiweng Zhang,et al."Effects of rapid thermal annealing on interfacial and electrical properties of Gd-doped HfO2 high-k gate dielectrics".Journal of Alloys and Compounds Vol.646(2015):310-314. |
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