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	High-current injection in Spreading-Resistance Temperature sensor on SOI (EI收录)
	Wu, Z.H.[1]; Lai, P.T.[1]; Li, Bin[2]; Sin, J.K.O.[3]
会议名称	Proceedings of the IEEE Hong Kong Electron Devices Meeting
会议日期	June 22, 2002
会议地点	Hong Kong, China
关键词	Doping (additives) Electric conductivity Electron devices Physics Semiconductor doping Silicon Silicon compounds Temperature sensors Thick films Thin films
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2141134
专题	华南理工大学
作者单位	1.[1] Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong 2.[2] Department of Applied Physics, South China University of Technology, Guangzhou, China 3.[3] Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong
推荐引用方式 GB/T 7714	Wu, Z.H.[1],Lai, P.T.[1],Li, Bin[2],等. High-current injection in Spreading-Resistance Temperature sensor on SOI (EI收录)[C]. 见:Proceedings of the IEEE Hong Kong Electron Devices Meeting. Hong Kong, China. June 22, 2002.

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